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Advanced science: high sensitivity photodetectors based on gradient architecture 2D / 3D Perovskite Thin Films

wallpapers News 2020-12-18
In recent years perovskite materials such as solar cells light-emitting diodes photodetectors have attracted extensive attention research in the photoelectric field because of their unique photoelectric properties. However the traditional three-dimensional perovskite is very sensitive to water oxygen which limits its further development. The inorganic spacer cations of two-dimensional perovskite can form a protective layer to prevent the corrosion of the external environment but its larger inorganic components also make their photoelectric performance much lower than that of three-dimensional perovskite. Based on the tunability of two-dimensional perovskite it is one of the main means to improve the performance of two-dimensional perovskite photodetectors to generate quasi two-dimensional or two-dimensional / three-dimensional perovskite heterostructures.

Professor Yan Feng of Hong Kong Polytechnic University based on the optimized hot coating technology two-dimensional / three-dimensional perovskite thin films were prepared with (PEA) 2man-1pbni3n 1 precursor solution a high-performance photoelectric detector with vertical heterojunction was realized. Through XRD absorption PL fib-tem characterization it is confirmed that the preferential deposition of two-dimensional perovskite pea2pbi4 can be induced by hot coating at appropriate stoichiometry due to the difference of solubility between peai Mai the two-dimensional / three-dimensional perovskite heterostructure can be formed from bottom to top along the substrate. Further we build phototransistors based on this vertical heterostructure obtain p-type channels in perovskite films near the substrate. The results show that due to the continuously changing gradient structure b gap in the vertical heterojunction the holes will spontaneously inject from the three-dimensional perovskite layer into the two-dimensional perovskite layer near the substrate the electrons will inject from the opposite direction into the three-dimensional perovskite layer near the film surface. When the heterojunction is used in photodetectors the spontaneous charge separation effect can effectively inhibit the recombination of photoinduced charges. In addition the vertical heterojunction achieved by this work has higher carrier lifetime charge density which enables it to obtain better specific detectivity (2 × 1012 Jones) responsivity (149 AW-1) compared with pure two-dimensional three-dimensional perovskite devices making a significant breakthrough for the urgent problem of photoelectric performance of two-dimensional perovskite devices.


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