1. Product Scientific Research and Structural Stability
1.1 Crystal Chemistry and Bonding Characteristics
(Silicon Carbide Crucibles)
Silicon carbide (SiC) is a covalent ceramic made up of silicon and carbon atoms prepared in a tetrahedral latticework, mostly in hexagonal (4H, 6H) or cubic (3C) polytypes, each displaying phenomenal atomic bond strength.
The Si– C bond, with a bond energy of roughly 318 kJ/mol, is amongst the best in structural ceramics, giving exceptional thermal security, firmness, and resistance to chemical assault.
This durable covalent network causes a material with a melting point surpassing 2700 ° C(sublimes), making it one of one of the most refractory non-oxide ceramics offered for high-temperature applications.
Unlike oxide ceramics such as alumina, SiC maintains mechanical strength and creep resistance at temperatures over 1400 ° C, where lots of metals and traditional ceramics start to soften or degrade.
Its reduced coefficient of thermal development (~ 4.0 × 10 ⁻⁶/ K) combined with high thermal conductivity (80– 120 W/(m · K)) enables fast thermal cycling without disastrous splitting, an essential characteristic for crucible efficiency.
These intrinsic residential or commercial properties originate from the balanced electronegativity and comparable atomic sizes of silicon and carbon, which advertise an extremely secure and largely packed crystal structure.
1.2 Microstructure and Mechanical Strength
Silicon carbide crucibles are commonly fabricated from sintered or reaction-bonded SiC powders, with microstructure playing a crucial duty in toughness and thermal shock resistance.
Sintered SiC crucibles are produced through solid-state or liquid-phase sintering at temperature levels over 2000 ° C, often with boron or carbon ingredients to enhance densification and grain border cohesion.
This procedure generates a totally dense, fine-grained framework with marginal porosity (
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